MR5A16ACMA35: The Ultimate 32Mb Non-Volatile MRAM Solution for Demanding Applications

In today's data-driven world where reliability and speed are paramount, the MR5A16ACMA35 from Everspin Technologies Inc. emerges as a game-changing memory solution. This comprehensive guide explores why engineers across industries are adopting this cutting-edge Magnetoresistive RAM (MRAM) for mission-critical applications.

Why MR5A16ACMA35 is Revolutionizing Memory Technology

The MR5A16ACMA35 represents the pinnacle of non-volatile memory technology, combining the speed of SRAM with the persistence of flash memory. As a 32Mb (2M x 16) parallel interface MRAM in a compact 48-FBGA package, it delivers:

• Instantaneous Data Persistence: Unlike battery-backed SRAM, data remains intact for 20+ years without power
• 35ns Read/Write Speeds - 1000x faster than NOR flash with deterministic performance
• Infinite Endurance (1E16 write cycles) eliminates wear-out concerns in high-write applications
• Radiation-Resistant design ideal for aerospace and medical applications

Detailed Technical Specifications

Memory Architecture

Parameter	Specification
Density	32 Megabit (4MB)
Organization	2,097,152 words 16 bits
Interface	Parallel (Asynchronous SRAM-compatible)
Technology	Toggle Mode MRAM

Performance Characteristics

• Access Time: 35ns (max) from address valid
• Write Pulse Width: 35ns (min)
• Cycle Time: 35ns for read/write operations
• Data Retention: >20 years at 85 C

Power Requirements

• Voltage Range: 3.0V to 3.6V
• Active Current: 70mA (typical during writes)
• Standby Current: 35 A (typical)

Industry-Leading Applications

1. Industrial Automation Systems

The MR5A16ACMA35 is transforming industrial controls with:

• Instant backup of PLC program states during power loss
• High-speed logging of sensor data in real-time
• Storage of calibration data for robotic systems

2. Next-Gen Automotive Electronics

Automotive designers leverage this MRAM for:

• Black box data recorders (EDRs) capturing crash data
• ADAS sensor fusion memory buffers
• Infotainment system configuration storage

3. Mission-Critical Embedded Systems

Key implementations include:

• Medical device firmware storage
• Military/aerospace navigation systems
• 5G baseband processing buffers

Competitive Advantages Over Alternative Technologies

The MR5A16ACMA35 outperforms competing memory technologies:

Technology	Endurance	Write Speed	Power Fail Safety
MR5A16ACMA35 MRAM	Unlimited	35ns	Instant
NOR Flash	100K cycles	ms range	Partial page risk
Battery-Backed SRAM	Unlimited	10ns	Battery failure risk
FRAM	1E14 cycles	50ns	Instant

Design Implementation Guide

PCB Layout Recommendations

• Place decoupling capacitors within 5mm of VDD pins
• Maintain 50 impedance for address/data lines
• Follow JEDEC JESD22-A104 thermal cycling guidelines

Signal Integrity Considerations

• Implement series termination resistors (22 typical)
• Keep trace lengths matched ( 5mm) for parallel bus
• Use ground guards for high-speed signals

Frequently Asked Questions

Q: Can MR5A16ACMA35 replace both flash and SRAM in my design?
A: Yes, its non-volatile nature eliminates separate program/store memory requirements in many applications.

Q: How does temperature affect performance?
A: The device maintains specified timing across the full -40 C to +85 C range without derating.

Q: What's the recommended reflow profile?
A: Follow IPC/JEDEC J-STD-020D for Pb-free processing (peak 260 C).

Purchasing Information

The MR5A16ACMA35 is available in tape-and-reel packaging for automated assembly. Contact our technical sales team for:

• Volume pricing discounts
• Evaluation board options (EVB-MR5A16A)
• Long-term supply agreements

Call-to-Action: Ready to experience MRAM advantages? Request samples or download datasheet today!