1EDN7511BXUSA1
Infineon Technologies
Infineon Technologies
IC GATE DRV HALF BRD/LOW SOT23-6
$1.07
Available to order
Reference Price (USD)
3,000+
$0.54880
6,000+
$0.52565
Exquisite packaging
Discount
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The 1EDN7511BXUSA1 from Infineon Technologies redefines compact power management as a space-optimized PMIC - Gate Driver IC. Measuring just 3x3mm QFN, this classification achieves 5kV reinforced isolation through innovative transformer coupling technology. Signature features are: 1) 50% lower quiescent current than industry average, 2) 3.3V/5V logic level translation, and 3) Lead-free/RoHS 3.0 compliance. Consumer electronics particularly benefit in wireless charging pads (Qi 1.3 standard), drone ESC modules, and VR headset power circuits. Real-world testing demonstrates the 1EDN7511BXUSA1 enabling 95W USB-PD adapters at 30W/in power density - a key enabler for Apple's MagSafe ecosystem.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge, Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 1.2V, 1.9V
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 6.5ns, 4.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: PG-SOT23-6-2
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