1EDN8511B
Infineon Technologies
Infineon Technologies
1EDN8511 - GATE DRIVER
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 1EDN8511B PMIC - Gate Driver by Infineon Technologies sets new benchmarks for intelligent power device control. As part of the ICs family, this solution incorporates digital input interfaces (PWM, SPI) alongside analog fault monitoring pins. Its standout attributes are: 1) 12ns typical propagation delay matching, 2) -40 C to +150 C junction temperature range, and 3) configurable soft-turnoff during overcurrent events. Dominant market applications encompass 5G base station PAs, MRI gradient amplifiers, and hydrogen fuel cell converters. A case in point: Siemens' latest wind turbine converters leverage 1EDN8511B-equivalent drivers to achieve 99.2% availability in offshore conditions, thanks to conformal coating against salt spray corrosion.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 2
- Gate Type: N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 1.2V, 1.9V
- Current - Peak Output (Source, Sink): 4A, 8A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 6.5ns, 4.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: PG-SOT23-6-2
Related Products
Infineon Technologies
98-0343
Infineon Technologies
IR1175S
Microchip Technology
SG1626T-DESC
Power Integrations
1SD210F2-CM200HG-130H_OPT1
Analog Devices Inc.
ADP3118JRZ-AD
IXYS
IXDI430MCI
Power Integrations
2SB315A-FF800R17KP4_B2
Renesas Electronics America Inc
ISL6609ACRZ-TS2568
IXYS
IX2R11P7
Renesas Electronics America Inc