1N4006G-T
Diodes Incorporated
Diodes Incorporated
DIODE GEN PURP 800V 1A DO41
$0.39
Available to order
Reference Price (USD)
5,000+
$0.06200
10,000+
$0.05580
25,000+
$0.05270
50,000+
$0.04960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 1N4006G-T single rectifier diode by Diodes Incorporated is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The 1N4006G-T is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Diodes Incorporated's 1N4006G-T is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
SS16HE3_B/I
Diodes Incorporated
DTH6007PT
Vishay General Semiconductor - Diodes Division
BYW36-TAP
Panjit International Inc.
SK32_R1_00001
Taiwan Semiconductor Corporation
SS210L RUG
onsemi
NRVUA120VT3G
Panjit International Inc.
US1A_R1_00001
Microchip Technology
JANTXV1N5617/TR
Comchip Technology
SS310B-HF
Nexperia USA Inc.