1N4007T-G
Comchip Technology
Comchip Technology
DIODE GEN PURP 1KV 1A DO41
$0.21
Available to order
Reference Price (USD)
5,000+
$0.02300
10,000+
$0.02000
25,000+
$0.01800
50,000+
$0.01600
125,000+
$0.01400
Exquisite packaging
Discount
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Enhance your circuit performance with the 1N4007T-G single rectifier diode from Comchip Technology. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the 1N4007T-G delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Comchip Technology's 1N4007T-G is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 150°C
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