1N4448W-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
$0.04
Available to order
Reference Price (USD)
10,000+
$0.03860
Exquisite packaging
Discount
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Maximize your device's efficiency with the 1N4448W-HE3-18 single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The 1N4448W-HE3-18 is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Vishay General Semiconductor - Diodes Division's 1N4448W-HE3-18 is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 75 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 150°C
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