1N4448WS-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
$0.29
Available to order
Reference Price (USD)
3,000+
$0.05060
6,000+
$0.04460
15,000+
$0.03860
30,000+
$0.03660
75,000+
$0.03460
150,000+
$0.03260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the 1N4448WS-HE3-08 single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the 1N4448WS-HE3-08 delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Vishay General Semiconductor - Diodes Division's 1N4448WS-HE3-08 is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 75 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
onsemi
BAT54LT1G
Vishay General Semiconductor - Diodes Division
BYG20D-E3/TR
Microchip Technology
JANTXV1N5804URS
Comchip Technology
CDBURT0530LL-HF
Rohm Semiconductor
RB521CM-40T2R
Vishay General Semiconductor - Diodes Division
VS-30APF12-M3
Vishay General Semiconductor - Diodes Division
FESF16GTHE3_A/P
Vishay General Semiconductor - Diodes Division
BAS16WS-G3-18
NTE Electronics, Inc
NTE6108
Micro Commercial Co