1N4448WS-HE3-18

Vishay General Semiconductor - Diodes Division

Manufacturer

Vishay General Semiconductor - Diodes Division

Description:

DIODE GEN PURP 75V 150MA SOD323

Datasheet:

1N4448WS-HE3-18 Datasheet

$0.04

Available to order

Reference Price (USD)

$0.03740

500+

$0.037026

1000+

$0.036652

1500+

$0.036278

2000+

$0.035904

2500+

$0.03553

Exquisite packaging

Discount

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The 1N4448WS-HE3-18 single rectifier diode by Vishay General Semiconductor - Diodes Division is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The 1N4448WS-HE3-18 is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Vishay General Semiconductor - Diodes Division's 1N4448WS-HE3-18 is the ultimate solution for high-performance rectification needs.

Specifications

Product Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

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1N4448WS-HE3-18

Reference Price (USD)

Specifications

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