1N5061TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 2A SOD57
$0.24
Available to order
Reference Price (USD)
25,000+
$0.16800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 1N5061TAP from Vishay General Semiconductor - Diodes Division is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Vishay General Semiconductor - Diodes Division's dedication to quality means the 1N5061TAP meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 40pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: SOD-57, Axial
- Supplier Device Package: SOD-57
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Taiwan Semiconductor Corporation
SS23M RSG
Vishay General Semiconductor - Diodes Division
SGL41-50HE3/97
Panjit International Inc.
SS0520_R1_00001
Vishay General Semiconductor - Diodes Division
MBRB1660HE3_B/P
Microchip Technology
JANTXV1N4150UR-1
Micro Commercial Co
MUR60120B-BP
IXYS
W2865HA720
Rohm Semiconductor
RBR2L40ATE25
Taiwan Semiconductor Corporation
UF1DLWHRVG
Vishay General Semiconductor - Diodes Division