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1N5062TAP

Vishay General Semiconductor - Diodes Division
1N5062TAP Preview
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 2A SOD57
$0.69
Available to order
Reference Price (USD)
5,000+
$0.17400
10,000+
$0.16800
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 40pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C

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