1N5627-TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 3A SOD64
$1.13
Available to order
Reference Price (USD)
2,500+
$0.36400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's efficiency with the 1N5627-TR single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The 1N5627-TR is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Vishay General Semiconductor - Diodes Division's 1N5627-TR is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 7.5 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: SOD-64, Axial
- Supplier Device Package: SOD-64
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Diodes Incorporated
B3L30LP-7
Diodes Incorporated
B130L-13-F
Diotec Semiconductor
SK1040D2
Vishay General Semiconductor - Diodes Division
FESB8BT-E3/81
Vishay General Semiconductor - Diodes Division
NSB8BTHE3_B/I
MDD
RS2M
Micro Commercial Co
SMD2150PL-TP
Vishay General Semiconductor - Diodes Division
V2PM10-M3/H
Sanken
SJPB-D4VR
Comchip Technology