1N5806US
Microchip Technology
Microchip Technology
DIODE GEN PURP 150V 1A D5A
$5.97
Available to order
Reference Price (USD)
1+
$8.23000
10+
$7.40300
100+
$6.08650
500+
$5.09950
1,000+
$4.60600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 1N5806US from Microchip Technology is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Microchip Technology's 1N5806US for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 150 V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Micro Commercial Co
R4000GPS-TP
Diotec Semiconductor
SGL2-100-3G
Rohm Semiconductor
RFN10NS6SFHTL
IXYS
DSEP30-12AR
GeneSiC Semiconductor
GB25MPS17-247
Diotec Semiconductor
FT2000AB
Rohm Semiconductor
RB068MM-30TR
Panjit International Inc.
MBR880_T0_00001
Vishay General Semiconductor - Diodes Division
VS-18TQ035SHM3
Vishay General Semiconductor - Diodes Division