1N5809US
Microchip Technology
Microchip Technology
DIODE GEN PURP 100V 3A B-MELF
$8.20
Available to order
Reference Price (USD)
1+
$11.30000
10+
$10.17000
100+
$8.36200
500+
$7.00600
1,000+
$6.32800
Exquisite packaging
Discount
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The 1N5809US from Microchip Technology is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Microchip Technology's dedication to quality means the 1N5809US meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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