Shopping cart

Subtotal: $0.00

1N6481-E3/97

Vishay General Semiconductor - Diodes Division
1N6481-E3/97 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO213AB
$0.12
Available to order
Reference Price (USD)
10,000+
$0.09121
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Microchip Technology

JANTX1N1204AR

Comchip Technology

ACGRAT103-HF

Vishay General Semiconductor - Diodes Division

MCL4148-TR

Microchip Technology

JAN1N5554US/TR

Diodes Incorporated

SDT10A100P5-7D

Taiwan Semiconductor Corporation

SK56C V7G

Comchip Technology

CDBF70-HF

Top