1N8035-GA
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 650V 14.6A TO276
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The 1N8035-GA by GeneSiC Semiconductor is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The 1N8035-GA is also used in smart home devices and wearable technology, ensuring seamless operation. GeneSiC Semiconductor's expertise in semiconductor technology guarantees that the 1N8035-GA delivers top-notch performance in any application.
Specifications
- Product Status: Obsolete
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 14.6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 650 V
- Capacitance @ Vr, F: 1107pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-276AA
- Supplier Device Package: TO-276
- Operating Temperature - Junction: -55°C ~ 250°C
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