1SP0335V2M1-MBN1200H45E2-H
Power Integrations
Power Integrations
IGBT GATE DRIVER P/P 1CH SCALE-2
$202.21
Available to order
Reference Price (USD)
1+
$202.20833
500+
$200.1862467
1000+
$198.1641634
1500+
$196.1420801
2000+
$194.1199968
2500+
$192.0979135
Exquisite packaging
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The 1SP0335V2M1-MBN1200H45E2-H from Power Integrations redefines compact power management as a space-optimized PMIC - Gate Driver IC. Measuring just 3x3mm QFN, this classification achieves 5kV reinforced isolation through innovative transformer coupling technology. Signature features are: 1) 50% lower quiescent current than industry average, 2) 3.3V/5V logic level translation, and 3) Lead-free/RoHS 3.0 compliance. Consumer electronics particularly benefit in wireless charging pads (Qi 1.3 standard), drone ESC modules, and VR headset power circuits. Real-world testing demonstrates the 1SP0335V2M1-MBN1200H45E2-H enabling 95W USB-PD adapters at 30W/in power density - a key enabler for Apple's MagSafe ecosystem.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 23.5V ~ 26.5V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 35A, 35A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 4500 V
- Rise / Fall Time (Typ): 9ns, 30ns
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module