1SP0635V2M1-33
Power Integrations
Power Integrations
IC GATE DRVR HI/LOW SIDE MODULE
$347.11
Available to order
Reference Price (USD)
1+
$327.46000
10+
$317.38000
Exquisite packaging
Discount
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Power Integrations presents the 1SP0635V2M1-33 as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 14.5V ~ 15.5V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 35A, 35A
- Input Type: -
- High Side Voltage - Max (Bootstrap): 3300 V
- Rise / Fall Time (Typ): 9ns, 30ns
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: Module
- Supplier Device Package: Module
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