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1SS307(TE85L,F)

Toshiba Semiconductor and Storage
1SS307(TE85L,F) Preview
Toshiba Semiconductor and Storage
DIODE GEN PURP 30V 100MA SMINI
$0.40
Available to order
Reference Price (USD)
3,000+
$0.10230
6,000+
$0.09610
15,000+
$0.08990
30,000+
$0.08680
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 30 V
  • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
  • Operating Temperature - Junction: 125°C (Max)

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