1SS315TPH3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF DIODE SCHOTTKY 5V USC
$0.06
Available to order
Reference Price (USD)
3,000+
$0.06000
Exquisite packaging
Discount
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The 1SS315TPH3F RF Diode by Toshiba Semiconductor and Storage is a versatile and efficient solution in the Diodes - RF segment of Discrete Semiconductor Products. With its high breakdown voltage and fast recovery time, it is ideal for RF power amplifiers and mixers. Applications range from consumer electronics to industrial automation, showcasing its adaptability. Trust Toshiba Semiconductor and Storage to provide a diode that combines performance, durability, and cutting-edge technology for all your RF needs.
Specifications
- Product Status: Not For New Designs
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 5V
- Current - Max: 30 mA
- Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
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