1SV279,H3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Description:

PB-F ESC VARICAP DIODE (HF), IR=

Datasheet:

1SV279,H3F Datasheet

$0.09

Available to order

Reference Price (USD)

4,000+

$0.08600

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

The 1SV279,H3F series from Toshiba Semiconductor and Storage delivers benchmark performance in Variable Capacitance Diode technology. These Varicaps feature an innovative multi-layer depletion region design that achieves ultra-low Rs (series resistance) for high-efficiency energy harvesting systems. Ideal for smart grid synchronizers, plasma research equipment, and millimeter-wave scanners, these diodes offer industry-leading Q values up to 500 at 1GHz. With radiation-hardened versions available for space applications, 1SV279,H3F demonstrates Toshiba Semiconductor and Storage's commitment to pushing semiconductor boundaries. All products come with full traceability and counterfeit protection measures.