1SV281(TPH3,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE VCO V/UHF 10V ESC
$0.40
Available to order
Reference Price (USD)
4,000+
$0.08100
8,000+
$0.07650
12,000+
$0.06975
28,000+
$0.06525
100,000+
$0.06300
Exquisite packaging
Discount
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1SV281(TPH3,F) Variable Capacitance Diodes by Toshiba Semiconductor and Storage represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, 1SV281(TPH3,F) is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz
- Capacitance Ratio: 2
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 10 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
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