1SV282TPH3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE VARACTOR 34V SINGLE ESC
$0.09
Available to order
Reference Price (USD)
4,000+
$0.08600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
1SV282TPH3F Variable Capacitance Diodes by Toshiba Semiconductor and Storage represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, 1SV282TPH3F is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Not For New Designs
- Capacitance @ Vr, F: 3pF @ 25V, 1MHz
- Capacitance Ratio: 12.5
- Capacitance Ratio Condition: C2/C25
- Voltage - Peak Reverse (Max): 34 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
Related Products
NXP USA Inc.
BB208-03,115
Renesas Electronics America Inc
RKV501KJ#R1
Skyworks Solutions Inc.
SMV1220-079LF
MACOM Technology Solutions
MA46473-134
Panasonic Electronic Components
MA26V0400A
Sanyo
SVC233-TB-E
MACOM Technology Solutions
MAVR-045436-1146FT
MACOM Technology Solutions
MA46580-1209
Skyworks Solutions Inc.
SMV1265-040LF
Infineon Technologies