2DB1132P-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 32V 1A SOT89-3
$0.46
Available to order
Reference Price (USD)
2,500+
$0.15460
5,000+
$0.14620
12,500+
$0.13780
25,000+
$0.12800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2DB1132P-13 Bipolar Junction Transistor (BJT) from Diodes Incorporated is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2DB1132P-13 is a reliable component for demanding applications. Diodes Incorporated's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
- Power - Max: 1 W
- Frequency - Transition: 190MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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