2DB1386Q-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 20V 5A SOT89-3
$0.22
Available to order
Reference Price (USD)
2,500+
$0.24671
Exquisite packaging
Discount
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Optimize your electronic systems with the 2DB1386Q-13 Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2DB1386Q-13 delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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