2DD1664P-13
Diodes Incorporated
Diodes Incorporated
TRANS NPN 32V 1A SOT89-3
$0.14
Available to order
Reference Price (USD)
2,500+
$0.13860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2DD1664P-13 Bipolar Junction Transistor (BJT) by Diodes Incorporated is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2DD1664P-13 provides consistent performance in demanding applications. Choose Diodes Incorporated for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
- Power - Max: 1 W
- Frequency - Transition: 280MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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