2DD2679-13
Diodes Incorporated
Diodes Incorporated
TRANS NPN 30V 2A SOT89-3
$0.49
Available to order
Reference Price (USD)
2,500+
$0.15460
5,000+
$0.14620
12,500+
$0.13780
25,000+
$0.12800
Exquisite packaging
Discount
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Enhance your circuit designs with the 2DD2679-13 Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2DD2679-13 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 240MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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