2ED2182S06FXUMA1
Infineon Technologies
Infineon Technologies
IC HALF BRIDGE GATE DRIVER 650V
$3.24
Available to order
Reference Price (USD)
1+
$3.24000
500+
$3.2076
1000+
$3.1752
1500+
$3.1428
2000+
$3.1104
2500+
$3.078
Exquisite packaging
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The 2ED2182S06FXUMA1 from Infineon Technologies is a high-performance PMIC - Gate Driver IC designed for precision control in power management applications. This integrated circuit excels in driving MOSFETs and IGBTs with exceptional speed and reliability, making it ideal for high-frequency switching systems. Key features include robust noise immunity, low propagation delay, and adaptive dead-time control to optimize efficiency. These gate drivers are widely used in industrial motor controls, solar inverters, and electric vehicle powertrains. For instance, the 2ED2182S06FXUMA1 ensures seamless operation in servo drives requiring nanosecond-level response times. Its compact design and thermal protection mechanisms further enhance system longevity in demanding environments like factory automation and renewable energy systems.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 2.5A, 2.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-69
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