2ED21834S06JXUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Description:

IC HALF BRIDGE GATE DRIVER 650V

Datasheet:

2ED21834S06JXUMA1 Datasheet

$3.05

Available to order

Reference Price (USD)

$3.05000

500+

$3.0195

1000+

$2.989

1500+

$2.9585

2000+

$2.928

2500+

$2.8975

Exquisite packaging

Discount

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Optimize your power systems with Infineon Technologies's 2ED21834S06JXUMA1, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The 2ED21834S06JXUMA1 demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.

Specifications

Product Status: Active
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Rise / Fall Time (Typ): 15ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-14-49

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2ED21834S06JXUMA1

Reference Price (USD)

Specifications

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