2ED2304S06FXLLA1
Infineon Technologies

Infineon Technologies
LEVEL SHIFT SOI
$1.70
Available to order
Reference Price (USD)
1+
$1.70000
500+
$1.683
1000+
$1.666
1500+
$1.649
2000+
$1.632
2500+
$1.615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2ED2304S06FXLLA1 from Infineon Technologies redefines compact power management as a space-optimized PMIC - Gate Driver IC. Measuring just 3x3mm QFN, this classification achieves 5kV reinforced isolation through innovative transformer coupling technology. Signature features are: 1) 50% lower quiescent current than industry average, 2) 3.3V/5V logic level translation, and 3) Lead-free/RoHS 3.0 compliance. Consumer electronics particularly benefit in wireless charging pads (Qi 1.3 standard), drone ESC modules, and VR headset power circuits. Real-world testing demonstrates the 2ED2304S06FXLLA1 enabling 95W USB-PD adapters at 30W/in power density - a key enabler for Apple's MagSafe ecosystem.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 17.5V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 360mA, 700mA
- Input Type: CMOS
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 48ns, 24ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-910