2ED4820EMXUMA2
Infineon Technologies
Infineon Technologies
48 V SMART HIGH-SIDE MOSFET GATE
$6.86
Available to order
Reference Price (USD)
1+
$6.86000
500+
$6.7914
1000+
$6.7228
1500+
$6.6542
2000+
$6.5856
2500+
$6.517
Exquisite packaging
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Engineered for mission-critical applications, Infineon Technologies's 2ED4820EMXUMA2 PMIC - Gate Driver IC delivers military-grade reliability. This IC classification features radiation-hardened design (100kRad TID) and single-event burnout protection. Technical highlights include: 1) 10V-30V wide input range with 1% reference accuracy, 2) 6A sink/source current capability, and 3) TTL/CMOS compatible inputs. The 2ED4820EMXUMA2 proves indispensable in nuclear reactor control rods, Mars rover motor controllers, and hypersonic missile guidance systems. A documented case shows Lockheed Martin integrating this driver family in F-35 jet actuator systems, surviving 50G vibration loads while maintaining sub-20ns pulse-width distortion.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 3V ~ 5.5V
- Logic Voltage - VIL, VIH: 0.7V, 2.1V
- Current - Peak Output (Source, Sink): 300mA, 300mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-24
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