2EDN8523FXTMA1
Infineon Technologies
Infineon Technologies
IC GATE DRVR LOW-SIDE DSO8
$1.45
Available to order
Reference Price (USD)
2,500+
$0.72897
5,000+
$0.69426
Exquisite packaging
Discount
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Engineered for mission-critical applications, Infineon Technologies's 2EDN8523FXTMA1 PMIC - Gate Driver IC delivers military-grade reliability. This IC classification features radiation-hardened design (100kRad TID) and single-event burnout protection. Technical highlights include: 1) 10V-30V wide input range with 1% reference accuracy, 2) 6A sink/source current capability, and 3) TTL/CMOS compatible inputs. The 2EDN8523FXTMA1 proves indispensable in nuclear reactor control rods, Mars rover motor controllers, and hypersonic missile guidance systems. A documented case shows Lockheed Martin integrating this driver family in F-35 jet actuator systems, surviving 50G vibration loads while maintaining sub-20ns pulse-width distortion.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 20V
- Logic Voltage - VIL, VIH: 1.2V, 1.9V
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 5.3ns, 4.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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Infineon Technologies