2N1725
Microchip Technology
Microchip Technology
POWER BJT
$435.60
Available to order
Reference Price (USD)
1+
$435.60000
500+
$431.244
1000+
$426.888
1500+
$422.532
2000+
$418.176
2500+
$413.82
Exquisite packaging
Discount
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The 2N1725 by Microchip Technology is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust Microchip Technology for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Active
- Transistor Type: 3 NPN
- Voltage - Collector Emitter Breakdown (Max): 80V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 15V
- Current - Collector (Ic) (Max): 5A
- Operating Temperature: 175°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: -
- Supplier Device Package: -