2N2102
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 65V 1A TO39
$1.36
Available to order
Reference Price (USD)
1+
$2.43000
10+
$2.19900
25+
$1.96360
100+
$1.76720
250+
$1.57080
500+
$1.37446
1,000+
$1.13883
2,500+
$1.06029
5,000+
$1.04720
Exquisite packaging
Discount
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Enhance your circuit designs with the 2N2102 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2N2102 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 2nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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