2N2608UB
Microchip Technology
Microchip Technology
JFET
$83.96
Available to order
Reference Price (USD)
1+
$83.95500
500+
$83.11545
1000+
$82.2759
1500+
$81.43635
2000+
$80.5968
2500+
$79.75725
Exquisite packaging
Discount
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The 2N2608UB JFET by Microchip Technology is a versatile addition to our Discrete Semiconductor Products range. Optimized for low-power applications, this transistor delivers microampere-level drain current with precise control characteristics. Its unique selling points include industry-leading Yfs linearity and ultra-stable operation over decades of use. Common implementations include biomedical sensors, environmental monitoring equipment, and battery-powered field devices. The 2N2608UB performs exceptionally well in electrometer-grade input stages, photovoltaic detectors, and ultra-low-noise oscilloscopes. Designed with reliability in mind, it features proprietary passivation technology that prevents moisture ingress and ensures stable parameters throughout the product lifecycle.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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