2N2608UB/TR
Microchip Technology
Microchip Technology
JFET
$83.96
Available to order
Reference Price (USD)
1+
$83.95500
500+
$83.11545
1000+
$82.2759
1500+
$81.43635
2000+
$80.5968
2500+
$79.75725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N2608UB/TR from Microchip Technology represents the pinnacle of JFET technology in Discrete Semiconductor Products. This high-temperature variant operates flawlessly up to 200 C while maintaining stable parameters. The proprietary diffusion process ensures minimal parameter drift over time and temperature cycles. Oil exploration tools, geothermal monitoring systems, and aircraft engine sensors extensively use this JFET. Its unique capabilities shine in downhole electronics, combustion analysis equipment, and spacecraft thermal management systems. With its ceramic packaging and high-reliability construction, the 2N2608UB/TR continues to set industry benchmarks for JFET performance in extreme environment applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
Related Products
Microchip Technology
MQ2N4860UB/TR
Microchip Technology
MQ2N5115UB/TR
Microchip Technology
MQ2N4391UB
Microchip Technology
MV2N4861UB/TR
onsemi
TF222B-B4-TL-E-ON
onsemi
TF408-3-TL-H
Linear Integrated Systems, Inc.
LS844TB SOT-236L
Renesas Electronics America Inc
2SK514-T-A
Microchip Technology
MX2N4857UB/TR
Microchip Technology