2N3415
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 25V 0.5A TO92-3
$0.20
Available to order
Reference Price (USD)
2,500+
$0.59466
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the 2N3415 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2N3415 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
- Power - Max: 625 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
Related Products
onsemi
MJE171G
Central Semiconductor Corp
BC856BT TR PBFREE
onsemi
NJVNJD35N04T4G
Diotec Semiconductor
MPSA56BK
onsemi
2SA1525
Infineon Technologies
BFN18H6327XTSA1
onsemi
2SD1851-TB-E
onsemi
MPS4356RLRAG
onsemi
2SA1962OTU
NXP Semiconductors