2N3495
Microchip Technology
Microchip Technology
SMALL-SIGNAL BJT
$32.40
Available to order
Reference Price (USD)
1+
$32.40000
500+
$32.076
1000+
$31.752
1500+
$31.428
2000+
$31.104
2500+
$30.78
Exquisite packaging
Discount
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Upgrade your RF circuits with the 2N3495, a high-efficiency Bipolar Junction Transistor (BJT) from Microchip Technology. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The 2N3495 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Microchip Technology for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 120V
- Frequency - Transition: 150MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: -
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