2N3584
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 250V 2A TO66
$5.77
Available to order
Reference Price (USD)
1+
$13.72000
10+
$12.47400
30+
$11.53833
120+
$10.60292
270+
$9.66733
510+
$9.04365
1,020+
$8.31600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the 2N3584 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N3584 delivers superior performance in diverse environments. NTE Electronics, Inc's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 250 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V
- Power - Max: 35 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
Related Products
NXP USA Inc.
2PA1774SMB,315
Nexperia USA Inc.
PBSS304NZ,135
Microchip Technology
JANS2N2905
Fairchild Semiconductor
KSE13003TH1ATU
Fairchild Semiconductor
KSA940H2TU
Sanken
2SD2016
onsemi
2SB1202T-TL-E
Yangzhou Yangjie Electronic Technology Co.,Ltd
MMBT2907A-F2-0000HF
onsemi
MJD350T4G
Diodes Incorporated