2N3637UB/TR
Microchip Technology
Microchip Technology
TRANS PNP 175V 1A UB
$14.66
Available to order
Reference Price (USD)
1+
$14.65500
500+
$14.50845
1000+
$14.3619
1500+
$14.21535
2000+
$14.0688
2500+
$13.92225
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2N3637UB/TR Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2N3637UB/TR is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Microchip Technology for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1.5 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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