2N3879A
Microchip Technology
Microchip Technology
POWER BJT
$23.43
Available to order
Reference Price (USD)
1+
$23.43000
500+
$23.1957
1000+
$22.9614
1500+
$22.7271
2000+
$22.4928
2500+
$22.2585
Exquisite packaging
Discount
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Experience unmatched performance with the 2N3879A Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2N3879A delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Microchip Technology for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7 A
- Voltage - Collector Emitter Breakdown (Max): 75 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
- Current - Collector Cutoff (Max): 25mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
- Power - Max: 35 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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