2N4393-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V .1NA TO-18
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N4393-E3 JFET by Vishay Siliconix is a versatile addition to our Discrete Semiconductor Products range. Optimized for low-power applications, this transistor delivers microampere-level drain current with precise control characteristics. Its unique selling points include industry-leading Yfs linearity and ultra-stable operation over decades of use. Common implementations include biomedical sensors, environmental monitoring equipment, and battery-powered field devices. The 2N4393-E3 performs exceptionally well in electrometer-grade input stages, photovoltaic detectors, and ultra-low-noise oscilloscopes. Designed with reliability in mind, it features proprietary passivation technology that prevents moisture ingress and ensures stable parameters throughout the product lifecycle.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Resistance - RDS(On): 100 Ohms
- Power - Max: 1.8 W
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
Related Products
Central Semiconductor Corp
CP548-2N5116-CT
Vishay Siliconix
2N4856JAN02
Vishay Dale
SST175-T1-E3
NXP USA Inc.
J5A080GHNT0BG2084,
Vishay Siliconix
2N4857JAN02
NXP USA Inc.
J2A012ZXS/S1AZ299J
NXP USA Inc.
J3A040YXS/T0BY4571
NXP USA Inc.
J2A012ZXZ/S1AZ197J
NXP USA Inc.
J5A080GHN/T0BG208Z
Vishay Siliconix