2N4923
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 80V 1A TO126
$1.08
Available to order
Reference Price (USD)
1+
$1.72000
10+
$1.55200
25+
$1.38600
100+
$1.24740
250+
$1.10880
500+
$0.97020
1,000+
$0.80388
2,500+
$0.74844
5,000+
$0.73920
Exquisite packaging
Discount
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Optimize your electronic systems with the 2N4923 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N4923 delivers superior performance in diverse environments. NTE Electronics, Inc's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
- Power - Max: 30 W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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