2N5089
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 25V 0.05A TO92
$0.14
Available to order
Reference Price (USD)
1+
$0.54000
10+
$0.45700
25+
$0.40080
100+
$0.34530
250+
$0.30096
500+
$0.25662
1,000+
$0.20117
2,500+
$0.18454
5,000+
$0.17345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the 2N5089 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2N5089 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92 (TO-226)
Related Products
onsemi
MPSW06RLRAG
STMicroelectronics
3STR1630
Microchip Technology
2N5877
onsemi
2SA1706T-AN
STMicroelectronics
BU931T
Nexperia USA Inc.
PUMH9/ZL135
onsemi
MTP1306
Diotec Semiconductor
BC860B
Microchip Technology
JANTXV2N2906AUA/TR
Nexperia USA Inc.