2N5114UB/TR
Microchip Technology
Microchip Technology
JFET
$59.90
Available to order
Reference Price (USD)
1+
$59.89500
500+
$59.29605
1000+
$58.6971
1500+
$58.09815
2000+
$57.4992
2500+
$56.90025
Exquisite packaging
Discount
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Introducing the 2N5114UB/TR from Microchip Technology's premium Discrete Semiconductor Products - a JFET engineered for high-frequency applications. This RF-optimized transistor offers outstanding gain-bandwidth product and minimal feedback capacitance. The advanced epitaxial process ensures tight parameter distribution and excellent yield. Wireless infrastructure equipment manufacturers utilize the 2N5114UB/TR in base station receivers, software-defined radios, and radar systems. Its low intermodulation distortion makes it perfect for multi-carrier cellular systems and satellite transponders. The device also finds use in specialized applications like quantum computing interfaces and terahertz wave detectors, demonstrating its exceptional high-frequency capabilities.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Resistance - RDS(On): 75 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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