2N5339P
Microchip Technology
Microchip Technology
POWER BJT
$44.40
Available to order
Reference Price (USD)
1+
$44.40000
500+
$43.956
1000+
$43.512
1500+
$43.068
2000+
$42.624
2500+
$42.18
Exquisite packaging
Discount
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The 2N5339P from Microchip Technology is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the 2N5339P is a reliable choice for both commercial and industrial use. Trust Microchip Technology to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)