2N5401YBU
onsemi
onsemi
TRANS PNP 150V 0.6A TO92-3
$0.38
Available to order
Reference Price (USD)
1+
$0.27000
10+
$0.22400
100+
$0.11970
500+
$0.07934
1,000+
$0.05452
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2N5401YBU Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2N5401YBU is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 400MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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