2N6032
Harris Corporation
Harris Corporation
TRANS NPN 90V 50A TO204AE
$19.80
Available to order
Reference Price (USD)
1+
$19.80000
500+
$19.602
1000+
$19.404
1500+
$19.206
2000+
$19.008
2500+
$18.81
Exquisite packaging
Discount
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Enhance your circuit designs with the 2N6032 Bipolar Junction Transistor (BJT) from Harris Corporation. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2N6032 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Harris Corporation to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 A
- Voltage - Collector Emitter Breakdown (Max): 90 V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 5A, 50A
- Current - Collector Cutoff (Max): 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50A, 2.6V
- Power - Max: 140 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-204AE
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