2N6045G
onsemi
onsemi
TRANS NPN DARL 100V 8A TO220
$1.40
Available to order
Reference Price (USD)
1+
$0.83000
50+
$0.68640
100+
$0.56360
500+
$0.44938
1,000+
$0.36321
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the 2N6045G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2N6045G is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
- Current - Collector Cutoff (Max): 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
NTE Electronics, Inc
NTE283
Nexperia USA Inc.
PBSS4520X,135
Renesas Electronics America Inc
2SC5594XP-TL-E
STMicroelectronics
D45H11FP
onsemi
MMBTA56LT3G
Diodes Incorporated
MMST2907AQ-7
onsemi
SMMBT3904LT1G
onsemi
NSCT817-25LT3G
Nexperia USA Inc.
2PC4081R,115
onsemi