2N6052
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 100V 12A TO204
$4.00
Available to order
Reference Price (USD)
1+
$6.93000
20+
$6.23700
40+
$5.68250
100+
$5.12820
260+
$4.71238
500+
$4.29660
1,000+
$3.74220
2,500+
$3.69600
Exquisite packaging
Discount
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Optimize your electronic systems with the 2N6052 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2N6052 delivers superior performance in diverse environments. NTE Electronics, Inc's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Power - Max: 150 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
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