2N6052G
onsemi
onsemi
TRANS PNP DARL 100V 12A TO204
$8.17
Available to order
Reference Price (USD)
1+
$7.45000
10+
$6.73200
100+
$5.57320
500+
$4.85304
1,000+
$4.22684
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2N6052G from onsemi is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the 2N6052G ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of 2N6052G and enhance your electronic projects with this top-quality component from onsemi.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Power - Max: 150 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
Related Products
Nexperia USA Inc.
BF820,215
Fairchild Semiconductor
FJD3076TM
Nexperia USA Inc.
PZT2907A,135
onsemi
EMD4DXV6T5
Solid State Inc.
MJ11014
Nexperia USA Inc.
MMBT3904,215
onsemi
FMMT549
Rohm Semiconductor
2SC5661T2LP
Nexperia USA Inc.
MJD45H11AJ
onsemi